Photoreflectance spectroscopy of GaAs-Al/sub x/Ga/sub 1-x/As quantum wells under hydrostatic pressure

Conference · Wed Jan 01 00:00:00 EST 1986

OSTI ID:7150089

Kangarlu, A; Chandrasekhar, H R; Chandrasekhar, M; Chambers, F A; Vojak, B A; Meese, J M

We present the first study of the effect of hydrostatic pressure on the photoreflectance (PR) spectra of GaAs - Al/sub x/Ga/sub 1/minus/x/As multiple quantum wells (MQW). As the levels in the CB move up in energy with pressure, they interfere with the L band signalled by a loss of intensity as they cross the latter. At pressures beyond 35 kbar the CB of GaAs crosses the L band of GaAs and the X band of the Al/sub x/Ga/sub 1/minus/x/As barrier. Staggered transitions across the interface from the X CB of Al/sub x/Ga/sub 1/minus/x/As to the valence band of GaAs are seen signalling the formation of a type II heterostructure beyond these pressures. The valence band offsets are deduced from this data and are in agreement with our published data of photoluminescence under pressure. The pressure dependence of the L band is also deduced from our results. 7 refs., 3 figs.

• Research Organization: Missouri Univ., Columbia (USA). Dept. of Physics and Astronomy; Amoco Research Center, Naperville, IL (USA)
• DOE Contract Number: AC02-84ER45048
• OSTI ID: 7150089
• Report Number(s): DOE/ER/45048-5; CONF-860892-6; ON: DE88009855
• Resource Relation: Conference: 18. international conference on physics of semiconductors, Stockholm, Sweden, 11 Aug 1986
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ENERGY-LEVEL TRANSITIONS
SEMICONDUCTOR DEVICES
ALUMINIUM ARSENIDES
ELECTRONIC STRUCTURE
INTERFACES
PRESSURE DEPENDENCE
PRESSURE EFFECTS
REFLECTION
SPECTRA
SPECTROSCOPY
VALENCE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
360602* - Other Materials- Structure & Phase Studies