MIS solar cells on thin polycrystalline silicon. Progress report No. 3, September 1-November 30, 1980

Technical Report · Sun Nov 30 23:00:00 EST 1980

DOI:https://doi.org/10.2172/6550291· OSTI ID:6550291

Anderson, W. A.

The first task of this project involves electron-beam deposition of thin silicon films on low cost substrates. The goal is to obtain 20 ..mu..m thick films having 20 ..mu..m diameter crystallites which may be recrystallized to > 40 ..mu..m. Material characterization and device studies are to be included in efforts to reach a 6% conversion efficiency. The second task deals with MIS solar cell fabrication on various types of silicon including poly-Si, ribbon-Si, silicon on ceramic, and thin film silicon. Conduction mechanism studies, optimum engineering design, and modification of the fabrication process are to be used to achieve 13% efficiency on Xtal-Si and 11% efficiency on poly-Si. The third task involves more detailed test procedures and includes spectral response, interface and grain boundary effects, computer analysis, materials studies, and grain boundary passivation. Progress is detailed. (WHK)

• Research Organization: State Univ. of New York, Buffalo (USA). Dept. of Electrical Engineering
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6550291
• Report Number(s): SERI/PR-9080-1-T3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CRUCIBLES
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
ETCHING
FABRICATION
FILMS
GRAIN BOUNDARIES
MASKING
MICROSTRUCTURE
MIS TRANSISTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
POLISHING
POLYCRYSTALS
RELIABILITY
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE FINISHING
TRANSISTORS