Field- and time-dependent radiation effects at the SiO/sub 2//Si interface of hardened MOS capacitors
The field and temperature dependence of the interface-state density as a function of time following pulsed e-beam irradiation, and the dose dependence of the interface-state density following steady state /sup 60/Co irradiation were examined in MOS capacitors with both hardened dry and wet (pyrogenic) gate oxides. From the results of the pulsed e-beam experiment, it is shown that in the wet oxide the electric field affects the time scale for the buildup of interface states as well as the final or saturation value of interface states at late times (approximately 10/sup 5/ s), but that in the dry oxide there is no marked field dependence. For the wet oxide, temperature affects only the time scale for the buildup of interface states. From total-dose /sup 60/Co measurements, a power law dependence is reported on dose, D/sup 0/./sup 65/, for both wet and dry oxide capacitors. The buildup of interface states in the wet-oxide capacitors is considerably larger than in the dry.
- Research Organization:
- Harry Diamond Labs., Adelphi, MD
- OSTI ID:
- 6545863
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-24:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
HARDENING
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES