Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Interface state generation associated with hole transport in metal-oxide-semiconductor structures

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.337618· OSTI ID:5726108
;
The buildup of interface states in Al--SiO/sub 2/--Si metal-oxide-semiconductor capacitors following exposure to pulsed electron-beam irradiation has been previously shown to be a two-stage process. In the present work, we further examined the buildup by varying the field across the oxide during the early (10/sup -6/--1 s) stage. The number of interface states that eventually result from irradiation is found to depend primarily upon the electric field present in the oxide while the radiation-generated holes are transporting through the oxide and not upon the field present while the electron-hole pairs are being created (during the radiation pulse). The results indicate that the holes are primarily responsible for the interface state buildup and imply that they initiate interface state production during the transport stage by generating or activating a precursor state or species in the oxide.
Research Organization:
U. S. Army Laboratory Command, Harry Diamond Laboratories, Adelphi, Maryland 20783-1197
OSTI ID:
5726108
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:1; ISSN JAPIA
Country of Publication:
United States
Language:
English

Similar Records

Physical processes associated with radiation-induced interface states. Technical report
Technical Report · Mon Mar 31 23:00:00 EST 1986 · OSTI ID:5585869
Hole-trapping/hydrogen transport (HT) sup 2 model for interface-trap buildup in MOS devices
Conference · Sun Dec 31 23:00:00 EST 1989 · OSTI ID:6763446
Dependence of interface-state buildup on hole generation and transport in irradiated MOS capacitors
Conference · Tue Nov 30 23:00:00 EST 1976 · IEEE Trans. Nucl. Sci.; (United States) · OSTI ID:7307245

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM
BEAMS
CAPACITORS
CHALCOGENIDES
CHARGED-PARTICLE TRANSPORT
ELECTRICAL EQUIPMENT
ELECTRON BEAMS
ELECTRONIC STRUCTURE
ELEMENTS
EQUIPMENT
HOLES
JUNCTIONS
LEPTON BEAMS
METALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES