Physical processes associated with radiation-induced interface states. Technical report
The buildup of interface states in Al-SiO/sub 2/-Si metal oxide semiconductor capacitors following exposure to pulsed electron-beam irradiation has been previously shown to be a two-stage process. In this work, the buildup was further examined by varying the polarity and magnitude of the field across the oxide during the two stages of the buildup. Specifically, both early (.000001 to 1 s) and late (1 to 10000 s) time regimes are explored. An empirical model of radiation-induced interface states at the SiO/sub 2//Si interface is presented. The formulation, which explicitly addresses the time-dependent two-stage nature of the buildup process, gives the mathematical dependencies of the experimentally observed buildup on time, field, temperature, and dose. Along with the results of the field-switching experiments, the implications of the empirical model for the microscopic mechanisms involved in the buildup are discussed. In particular, the first stage is attributed to positive-ion release in the bulk of the oxide via interactions with radiation-generated holes. The second stage is then associated with the transport of the liberated ions to the SiO/sub 2//Si interface (for positive gate bias) where a subsequent interaction results in the appearance of electrically observable interface states. The experimental results and model are compared to and interpreted in light of recent related work in the literature.
- Research Organization:
- Harry Diamond Labs., Adelphi, MD (USA)
- OSTI ID:
- 5585869
- Report Number(s):
- AD-A-167280/7/XAB; HDL-TR-2081
- Country of Publication:
- United States
- Language:
- English
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360605* -- Materials-- Radiation Effects
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Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BEAMS
CAPACITORS
CATIONS
CHALCOGENIDES
CHARGED PARTICLES
ELECTRICAL EQUIPMENT
ELECTRON BEAMS
ELEMENTS
EQUIPMENT
INTERFACES
IONS
LEPTON BEAMS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PULSES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TIME DEPENDENCE