Time-dependent interface trap effects in MOS devices

Conference · Wed Nov 30 23:00:00 EST 1988 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6166347

Boesch, Jr, H E

A fast charge-pumping technique was used to measure the radiation-induced buildup of interface traps in MOS structures after exposure to short-pulse irradiation. A strong dependence of the time scale of the late-time buildup (t > 10 ms) on oxide electric field at very early times (10 ..mu..s to 0.5 ms) is explained in terms of a positive-ion-drift model. The early-time buildup (t < 10 ms) component was examined in detail, and evidence is presented that the early buildup is controlled by transport of holes to the SiO/sub 2//Si interface.

• Research Organization: Harry Diamond Labs., Adelphi, MD (US)
• OSTI ID: 6166347
• Report Number(s): CONF-880730-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation &amp; Shielding Physics-- Radiation Physics
Shielding Calculations &amp; Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
CHALCOGENIDES
CHARGED-PARTICLE TRANSPORT
ELECTRIC FIELDS
ELEMENTS
EQUIPMENT INTERFACES
ION DRIFT
IRRADIATION
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TIME DEPENDENCE
TRANSISTORS
TRAPS