Transverse and longitudinal mode control in semiconductor injection lasers

Journal Article · Thu Sep 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1072059· OSTI ID:6545300

Yamada, M

Theoretical analyses of the transverse and longitudinal mode control of injection lasers are combined and discussed. Guided mode and transverse mode control are addressed, and lasing gain calculated by application of the density matrix formalism is reviewed. Electron transition mechanisms in semiconductor crystals are examined, and linear and nonlinear gain coefficients are calculated. Coupled variations of the electron density and light intensity are formulated in improved rate equations by which mode coupling or mode competition can be discussed. Numerical results demonstrating the relationship between the saturated gain profile and the intraband relaxation time are given. The relation between the single longitudinal mode operation and other physical phenomena such as transverse mode control, the spontaneously emitted optical field, impurity concentration in the active region, and direct modulation are discussed.

• Research Organization: Kanazawa Univ., Japan
• OSTI ID: 6545300
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CONTROL
ELECTRON DENSITY
GAIN
IMPURITIES
LASERS
MECHANICS
MODE CONTROL
NUMERICAL SOLUTION
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
QUANTUM MECHANICS
REFRACTIVITY
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS