Transverse and longitudinal mode control in semiconductor injection lasers

Journal Article · Thu Sep 01 00:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1072059· OSTI ID:5035358

Yamada, M

Mechanisms which determine the oscillating transverse and longitudinal modes in semiconductor injection lasers are discussed in this paper. The analysis is based on the semiclassical method in which the optical field is represented by Maxwell equations and the lasing phenomenon is analyzed quantum mechanically using the density matrix formalism. Guided modes are classified by the relation between refractive index and gain-loss differences at the boundaries of the active region as normal guided mode (index guiding), active-guided mode (gain guiding), and leaky mode (anti-index guiding). Longitudinal mode behavior is discussed in terms of electron transition mechanism in semiconductor crystals. The relaxation effect of the electron wave is introduced in this model. Profiles of the saturated gain and the spatial diffusion of the electron are related to this relaxation effect. Mode competition phenomena are analyzed, and a strong gain suppression among the longitudinal modes is shown to be as an intrinsic property of semiconductor lasers. The possibility of obtaining single longitudinal mode operation is postulated. Physical influences for stable single longitudinal mode operation are discussed in terms of transverse mode control (or stripe structure), spontaneous emission, threshold current level, impurity concentration in the active region, and direct modulation. Some experimental results are also given to support these analyses.

• Research Organization: Dept. of Electrical Engineering, Faculty of Technology, Kanazawa University, Kanazawa
• OSTI ID: 5035358
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 19:9; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CONTROL
DATA
DENSITY MATRIX
DIFFERENTIAL EQUATIONS
EQUATIONS
EXPERIMENTAL DATA
GAIN
INFORMATION
LASERS
MATRICES
MAXWELL EQUATIONS
MECHANICS
MODE CONTROL
NUMERICAL DATA
OPTICAL PROPERTIES
OSCILLATION MODES
PARTIAL DIFFERENTIAL EQUATIONS
PHYSICAL PROPERTIES
QUANTUM MECHANICS
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS