Longitudinal mode behavior of transverse-mode-stabilized InGaAsP/InP double-heterostructure laser

Journal Article · Mon Jun 15 04:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92236· OSTI ID:6541772

Ishikawa, H; Imai, H; Tanahashi, T; Takusagawa, M

The longitudinal mode behavior of the transverse-mode-stabilized separated multiclad layer stripe geometry InGaAsP/InP double-heterostructure lasers emitting at 1.3 and at 1.5 mm is examined at 20 /sup 0/C. The superradiant side modes show that the gain is enhanced on the longer wavelength side of the lasing mode with an increase of the injection current, while the gain is suppressed with energy width of 3 meV on the shorter wavelength side of the lasing mode. The lasing longitudinal mode changes to the longer wavelength mode even under pulsed operation when injection current is increased due to the asymmetric gain spectrum. The result suggests that the intraband relaxation time of quaternary lasers is considerably longer than that of GaAlAs lasers.

• Research Organization: Fujitsu Laboratories Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 6541772
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ASYMMETRY
DATA
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GEOMETRY
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LAYERS
MATHEMATICS
MEDIUM TEMPERATURE
NUMERICAL DATA
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILIZATION
WAVELENGTHS