Self-consistent solution for spatial hole burning in stripe geometry InGaAsP/InP double heterojunction lasers

Journal Article · Sat May 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331160· OSTI ID:5481538

Yano, M; Ishikawa, H; Takusagawa, M

This paper presents a study of spatial hole burning in the carrier concentration distribution of stripe geometry InGaAsP/InP double heterojunction lasers emitting at 1.3 ..mu..m. To study the behavior in detail we took the mutual relationships between the current flow in the resistive layer, the junction voltages between the active and confining layers, and the carrier concentration distribution in the active layer into consideration. Moreover, we treated the InP/InGaAsP/InP double heterojunction through an analysis of the heterojunction energy band structure. The analysis demonstrated that in narrow-stripe lasers (< or =7-..mu..m stripe width) spatial hole burning in the carrier concentration distribution is greatly suppressed even at twice the threshold. We found the existence of a self-focusing current flowing into the center of the stripe that acted to suppress spatial hole burning. The results suggest that in the quaternary lasers: the property of the active layer crystal, for example: long intraband relaxation time contributes greatly to the longitudinal-mode behavior.

• Research Organization: Fujitsu Laboratories, Ltd., 1015 Kamikodanaka Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 5481538
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
DATA
DISTRIBUTION
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GEOMETRY
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LAYERS
MATHEMATICAL MODELS
MATHEMATICS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPATIAL DISTRIBUTION
THEORETICAL DATA