Stable longitudinal-mode InGaAsP/InP internal-reflection-interference laser

Journal Article · Sat Jun 01 04:00:00 EDT 1985 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1985.1072730· OSTI ID:6113331

Ohshima, M; Hirayama, N; Kino, Y; Kobayasi, H; Matsuki, M; Takenaka, N; Toyoda, Y

An InGaAsP/InP 1.3 ..mu..m, buried-crescent internal-reflectioninterference (BC-IRI) laser has been developed. Interference is caused by internal reflections from the two faces of the InP notch built in the n-InGaAsP waveguide channel. In the best diode, threshold current was 25 mA, and the temperature variation of the lasing wavelength was 0.75 A//sup 0/C. Mode hopping was not observed in the temperature range from 15 to 45/sup 0/C, and stable single-mode operation at an injection level more than four times the threshold current was also confirmed. Furthermore, dynamic single-mode operation was obtained at modulation frequencies up to 1 GHz.

• Research Organization: Opto-Electronics Development Center, Matsushita Electric Industrial Company, Ltd., Higashimita, Tamaku, Kawasaki
• OSTI ID: 6113331
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-21:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
FREQUENCY MODULATION
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
INTERFERENCE
LASERS
MODE SELECTION
MODULATION
PNICTIDES
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
TEMPERATURE EFFECTS