Plasma deposition of wide gap, highly photoconductive a-Si:H thin films from disilane-helium mixtures

Journal Article · Tue Jan 01 04:00:00 EST 1985 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6543815

Rajeswaran, G; Vanier, P E; Corderman, R R; Kampas, F J

Wide gap (> 1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a UHV system from Si/sub 2/H/sub 6/-He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH/sub 4/, Si/sub 2/H/sub 6/-produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 10/sup 7/. 17 references, 5 figures, 1 table.

• Research Organization: Brookhaven National Lab., Upton, NY
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6543815
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 38; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
FLUIDS
GASES
HELIUM
HYDRIDES
HYDROGEN COMPOUNDS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PLASMA ARC SPRAYING
RARE GASES
SILANES
SILICON COMPOUNDS
SPRAY COATING
SURFACE COATING
TEMPERATURE DEPENDENCE
THIN FILMS