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147-nm photolysis of disilane

Journal Article · · J. Am. Chem. Soc.; (United States)
DOI:https://doi.org/10.1021/ja00531a017· OSTI ID:5102158
The photodecomposition of Si/sub 2/H/sub 6/ at 147 nm results in the formation of H/sub 2/, SiH/sub 4/, Si/sub 3/H/sub 8/, Si/sub 4/H/sub 10/, Si/sub 5/H/sub 12/, and a solid film of amorphous silicon hydride (a-Si:H). Three primary processes are proposed to account for the results, namely, (a) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. SiH/sub 2/ + SiH/sub 3/ + H (phi/sub a/ = 0.61); (b) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. SiH/sub 3/SiH + 2H (phi/sub b/ = 0.18); (c) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. Si/sub 2/H/sub 5/ + H (phi/sub c/ = 0.21). The overall quantum yields depend on the pressure but at 1 Torr partial pressure of Si/sub 2/H/sub 6/ are PHI(-Si/sub 2/H/sub 6/) = 4.3 +- 0.2, PHI(SiH/sub 4/) = 1.2 +- 0.4, PHI(Si/sub 3/H/sub 8/) = 0.91 +- 0.08, PHI(Si/sub 4/H/sub 10/) = 0.62 +- 0.03, PHI(Si,wall) = 2.2. Quantum yields for H/sub 2/ formation were not measured. A mechanism is proposed which is shown to be in accord with the experimental facts.
Research Organization:
Pennsylvania State Univ., University Park
DOE Contract Number:
EY-76-S-02-3416
OSTI ID:
5102158
Journal Information:
J. Am. Chem. Soc.; (United States), Journal Name: J. Am. Chem. Soc.; (United States) Vol. 102:11; ISSN JACSA
Country of Publication:
United States
Language:
English

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