147-nm photolysis of monosilane

Journal Article · Wed Feb 28 04:00:00 EST 1979 · J. Am. Chem. Soc.; (United States)

DOI:https://doi.org/10.1021/ja00499a010· OSTI ID:6299162

Perkins, G G.A.; Austin, E R; Lampe, F W

The 147-nm photolysis of SiH/sub 4/ results in the formation of H/sub 2/, Si/sub 2/H/sub 6/, Si/sub 3/H/sub 8/, and a solid hydridic silicon film. Two primary processes are involved, namely, (a) SiH/sub 4/ + hv ..-->.. SiH/sub 2/ + 2H and (b) SiH/sub 4/ + hv ..-->.. SiH/sub 3/ + H, with phi/sub a/ = 0.83 and phi/sub b/ = 0.17. The quantum yields depend on the pressure of SiH/sub 4/ but at 2 Torr are PHI(-SiH/sub 4/) = 4.4 +- 0.6, PHI(Si/sub 2/H/sub 6/) = 1.29 +- 0.08, PHI(Si/sub 3/H/sub 8/) = 0.46 +- 0.01, and PHI(Si/sub wall/) = 0.5; the quantum yield for H/sub 2/ formation were not measured. A mechanism is proposed, which incorporates the known reactions of SiH/sub 2/ and SiH/sub 3/ radicals, and is shown to be in accord with the experimental facts.

• Research Organization: Pennsylvania State Univ. University Park, PA
• OSTI ID: 6299162
• Journal Information: J. Am. Chem. Soc.; (United States), Journal Name: J. Am. Chem. Soc.; (United States) Vol. 101:5; ISSN JACSA
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400500* -- Photochemistry
CHALCOGENIDES
CHEMICAL ANALYSIS
CHEMICAL REACTION KINETICS
CHEMICAL REACTION YIELD
CHEMICAL REACTIONS
CRYOGENIC FLUIDS
DATA
DATA FORMS
DECOMPOSITION
ELEMENTS
EXPERIMENTAL DATA
FILMS
FLUIDS
HEAT TREATMENTS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INFORMATION
ISOLATED VALUES
KINETICS
LOW PRESSURE
NITRIC OXIDE
NITROGEN COMPOUNDS
NITROGEN OXIDES
NONMETALS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHOTOCHEMICAL REACTIONS
PHOTOLYSIS
PRESSURE DEPENDENCE
QUANTITATIVE CHEMICAL ANALYSIS
QUENCHING
REACTION KINETICS
SILANES
SILICON COMPOUNDS
TIME DEPENDENCE
WAVELENGTHS
YIELDS