Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Plasma deposition of wide gap, highly photoconductive a-Si:H thin films from disilane-helium mixtures

Conference ·
OSTI ID:6276374
Wide gap (>1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a uhv system from Si/sub 2/H/sub 6/-He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH/sub 4/, Si/sub 2/H/sub 6/-produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 10/sup 7/.
Research Organization:
Brookhaven National Lab., Upton, NY (USA)
DOE Contract Number:
AC02-76CH00016
OSTI ID:
6276374
Report Number(s):
BNL-35559; CONF-841157-35; ON: DE85004058
Country of Publication:
United States
Language:
English