Plasma deposition of wide gap, highly photoconductive a-Si:H thin films from disilane-helium mixtures
Conference
·
OSTI ID:6276374
Wide gap (>1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a uhv system from Si/sub 2/H/sub 6/-He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH/sub 4/, Si/sub 2/H/sub 6/-produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 10/sup 7/.
- Research Organization:
- Brookhaven National Lab., Upton, NY (USA)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 6276374
- Report Number(s):
- BNL-35559; CONF-841157-35; ON: DE85004058
- Country of Publication:
- United States
- Language:
- English
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Plasma deposition of wide gap, highly photoconductive a-Si:H thin films from disilane-helium mixtures
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147-nm photolysis of disilane
Journal Article
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Mon Dec 31 23:00:00 EST 1984
· Mater. Res. Soc. Symp. Proc.; (United States)
·
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Very wide-gap and device-quality a-Si:H from highly H{sub 2} diluted SiH{sub 4} plasma decomposed by high rf power
Conference
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Thu Jul 01 00:00:00 EDT 1999
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147-nm photolysis of disilane
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· J. Am. Chem. Soc.; (United States)
·
OSTI ID:5102158
Related Subjects
36 MATERIALS SCIENCE
360600* -- Other Materials
AMORPHOUS STATE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY GAP
FILMS
FLUIDS
GASES
HELIUM
HYDRIDES
HYDROGEN COMPOUNDS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PLASMA
RARE GASES
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
THIN FILMS
360600* -- Other Materials
AMORPHOUS STATE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY GAP
FILMS
FLUIDS
GASES
HELIUM
HYDRIDES
HYDROGEN COMPOUNDS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PLASMA
RARE GASES
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
THIN FILMS