Intrinsic and interfacial recombination in OMVPE- and MBE-prepared GaAs/Al[sub x]Ga[sub 1-x]As heterostructures
- International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
- Sandia National Labs., Albuquerque, NM (United States)
We have studied intrinsic free-carrier recombination in a variety of GaAs structures, including: OMVPE- and MBE-prepared GaAs/Al[sub x]Ga[sub 1-x]As double heterostructures, Na[sub 2]S passivated GaAs structures and bare GaAs structures. We find OMVPE prepared structures are superior to all of these other structures with 300 K lifetimes of [approximately] 2.5 [mu]s and negligible nonradiative interface and bulkrecombination, and thus are truly surface-free (S < 40 cm/s). Moreover, we observe systematic trends in optical properties versus growth conditions. Lastly, we find that the presence of free-exciton recombination in the low-temperature photoluminescence spectra is a necessary but not sufficient condition for optimal optical properties (i.e. long minority-carrier lifetimes).
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States); International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
- Sponsoring Organization:
- DOE; DOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6540108
- Report Number(s):
- SAND-93-0609C; CONF-930880--1; ON: DE93009844; CNN: N00014-85-C-0868; N00014-90-C-0077; N00014-91-J-1697
- Country of Publication:
- United States
- Language:
- English
Similar Records
Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor-phase epitaxy GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As structures
Intrinsic recombination and interface characterization in surface-free GaAs structures
Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
EPITAXY
EXCITONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INTERFACES
JUNCTIONS
LIFETIME
LUMINESCENCE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS