Intrinsic and interfacial recombination in OMVPE- and MBE-prepared GaAs/Al{sub x}Ga{sub 1-x}As heterostructures
- International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
- Sandia National Labs., Albuquerque, NM (United States)
We have studied intrinsic free-carrier recombination in a variety of GaAs structures, including: OMVPE- and MBE-prepared GaAs/Al{sub x}Ga{sub 1-x}As double heterostructures, Na{sub 2}S passivated GaAs structures and bare GaAs structures. We find OMVPE prepared structures are superior to all of these other structures with 300 K lifetimes of {approximately} 2.5 {mu}s and negligible nonradiative interface and bulkrecombination, and thus are truly surface-free (S < 40 cm/s). Moreover, we observe systematic trends in optical properties versus growth conditions. Lastly, we find that the presence of free-exciton recombination in the low-temperature photoluminescence spectra is a necessary but not sufficient condition for optimal optical properties (i.e. long minority-carrier lifetimes).
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States); International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10142362
- Report Number(s):
- SAND--93-0609C; CONF-930880--1; ON: DE93009844; CNN: Contract N00014-85-C-0868; Contract N00014-90-C-0077; Contract N00014-91-J-1697
- Country of Publication:
- United States
- Language:
- English
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