Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor-phase epitaxy GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As structures
- IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)
- Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)
We have studied free-carrier recombination and transport in GaAs structures prepared by different epitaxial growth techniques and with different ``surface barriers`` including molecular beam epitaxy (MBE) and organometallic vapor-phase epitaxy (OMVPE) prepared undoped, symmetric GaAs/Al{sub 0.3}Ga{sub 0.7}As double heterostructures and these same structures after etch removing the top Al{sub 0.3}Ga{sub 0.7}As layer and repassivating with Na{sub 2}S. We find 300-K lifetimes of {ge}2.5 {mu}s (350 ns), and interface recombination velocities of 40 cm/s (250 cm/s) for our OMVPE (MBE) structures. Identical measurements for Na{sub 2}S and bare surfaces yield interface recombination velocities of 5500 cm/s and 34 000 cm/s, respectively. Free-carrier transport in both types of structures is diffusive with hole mobilities of {similar_to}350 cm{sup 2}/V s.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 142577
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 64; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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