Studies of the hydrogen passivation of silicon grain boundaries
A model is presented which predicts the current flow through and around grain boundaries which have been treated with atomic hydrogen to reduce their trap-state densities. Measurements on hydrogenated silicon grain boundaries are shown to be in agreement with this model and quantitative estimates of hydrogen penetration depth are made. The dependence of this depth on sample temperature, surface preparation, hydrogen pressure, and geometry are systematically investigated. Maximum penetration is achieved in high-pressure discharges for sample temperatures between 350 and 400 /sup 0/C. The condition of the surface of the polycrystalline silicon is shown to be critically important for the in-diffusion process.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 6537456
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ATOMS
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
CRYSTALS
CURRENTS
DATA
DIFFUSION
ELECTRIC CURRENTS
ELEMENTS
ENERGY-LEVEL DENSITY
GRAIN BOUNDARIES
HIGH TEMPERATURE
HYDROGEN
INFORMATION
MATHEMATICAL MODELS
MICROSTRUCTURE
NONMETALS
NUMERICAL DATA
PASSIVATION
POLYCRYSTALS
PRESSURE DEPENDENCE
SEMIMETALS
SILICON
SURFACES
TEMPERATURE DEPENDENCE
THEORETICAL DATA