Multiple double heterojunction buried laser device. [Patent application]

Patent · Wed Jun 02 04:00:00 EDT 1982

OSTI ID:6537015

Hawrylo, F Z

A multiple double heterojunction buried laser device is formed of a bulk structure, a plurality of double heterojunction buried lasers and electrical means. The bulk structure includes, in order, an InP:Sn substrate, an InP:Te first layer, an InP:Zn second layer, an InP:Te third layer, and a capping n-type fourth layer. Multiple stripe-like openings are formed in the above layers and double heterojunction buried lasers are formed therein. The double heterojunction buried lasers include the following layers in order: an InP:Te heterojunction first layer, an InGaAsP quarternary second layer, an InP:Zn heterojunction third layer, and an InGaAsP:Zn capping fourth layer. A reverse biased junction is formed in said bulk structure so that current is confined to the lasers; the active lasing regions are above the p-type layers of the p-n reversed bias junction. The double heterojunction buried lasers can be cleaved from the laser device and operated as a single device.

• Research Organization: Department of the Air Force, Washington, DC (USA)
• Assignee: EDB-83-043769
• Patent Number(s): None
• OSTI ID: 6537015
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
LAYERS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SURFACE FINISHING
TELLURIUM
TIN
ZINC