Characterization of buried-nitride silicon for integrated circuit applications
Conference
·
OSTI ID:6536031
We have examined the microstructure and the transport properties of nitrogen-implanted silicon-on-insulator wafers, as well as the performance of integrated-circuit transistors fabricated in this material. The insulating regions were fabricated in silicon by the unpatterned implantation of 4x10/sup 17//cm/sup 2/, 300 keV nitrogen dimers followed by annealing at 1473/sup 0/K for 5 hours. For these parameters, the buried nitrogen-implanted layer crystallized into ..cap alpha..-silicon nitride, and contains approx. =20% excess silicon in the form of silicon inclusions of 5 to 15 nm diameter. The surface silicon layers are characterized by low-mobility, p-type conduction. The buried dielectric has a resistivity of approximately 10/sup 8/ ..cap omega..-cm. Functional p-channel, integrated circuit transistors have been fabricated in n-type epitaxial silicon gorwn over the buried-nitride wafers. These transistors devices are similar in performance to those fabricated in bulk silicon, (hole mobilities in inversion layers of 140 cm/sup 2//V-s), and demonstrate the suitability of the buried nitride process for integrated circuit applications.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); New Mexico Univ., Albuquerque (USA). Dept. of Chemical and Nuclear Engineering
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6536031
- Report Number(s):
- SAND-86-2593C; CONF-870438-13; ON: DE87008644
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHARGED PARTICLES
ELECTRONIC CIRCUITS
ELEMENTS
ENERGY RANGE
FABRICATION
INTEGRATED CIRCUITS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
MATERIALS
MICROELECTRONIC CIRCUITS
N-TYPE CONDUCTORS
NITRIDES
NITROGEN COMPOUNDS
NITROGEN IONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
TRANSISTORS
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHARGED PARTICLES
ELECTRONIC CIRCUITS
ELEMENTS
ENERGY RANGE
FABRICATION
INTEGRATED CIRCUITS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
MATERIALS
MICROELECTRONIC CIRCUITS
N-TYPE CONDUCTORS
NITRIDES
NITROGEN COMPOUNDS
NITROGEN IONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
TRANSISTORS