Radiation Hardened Silicon-on-Insulator Structures with N{sup +} Ion Modified Buried SiO{sub 2} Layer

Journal Article · Wed Dec 02 04:00:00 EST 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3275671· OSTI ID:21371347

Tyschenko, I E; Popov, V P ^[1]

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1. Institute of Semiconductor Physics, Russian Academy of Science, 630090 Novosibirsk (Russian Federation)

Radiation-resistant silicon-on-insulator structures were produced by N{sup +} ion implantation into thermally grown SiO{sub 2} film and subsequent hydrogen transfer of the Si layer to the nitrogen-implanted substrate under conditions of vacuum wafer bonding. Accumulation of the carriers in the buried SiO{sub 2} was investigated as a function of fluence of nitrogen ions in the range (1-6)x10{sup 15} cm{sup 2} and as a function of total radiation dose ranging from 10{sup 4} to 10{sup 7} rad (Si). It was found that the charge generated near the nitrided bonding interface was reduced by a factor of four compared to the thermal SiO{sub 2}/Si interface.

• OSTI ID: 21371347
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1194; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUILDUP
CHALCOGENIDES
CHARGE CARRIERS
CHARGED PARTICLES
CHEMICAL REACTIONS
DOSES
ELEMENTS
FILMS
HARDENING
HYDROGEN TRANSFER
INTERFACES
ION IMPLANTATION
IONS
LAYERS
NITRIDATION
NITROGEN IONS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES