Silicon-on-insulator structures with a nitrogenated buried SiO{sub 2} layer: Preparation and properties
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Electrical properties of silicon-on-insulator (SOI) structures with buried SiO{sub 2} layer implanted with nitrogen ions are studied in relation to the dose and energy of N{sup +} ions. It is shown that implantation of nitrogen ions with doses >3 Multiplication-Sign 10{sup 15} cm{sup -2} and an energy of 40 keV brings about a decrease in the fixed positive charge in the oxide and a decrease in the density of surface stares by a factor of 2. An enhancement of the effect can be attained by lowering the energy of nitrogen ions. The obtained results are accounted for by interaction of nitrogen atoms with excess silicon atoms near the Si/SiO{sub 2} interface; by removal of Si-Si bonds, which are traps of positive charges; and by saturation of dangling bonds at the bonding interface of the SOI structure.
- OSTI ID:
- 22004853
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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