GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy

Journal Article · Mon Jun 08 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97747· OSTI ID:6535865

Mitsunaga, K; Noda, S; Kojima, K; Kameya, M; Kyuma, K; Hamanaka, K; Nakayama, T

GaAs/AlGaAs transverse junction stripe lasers with a distributed feedback structure were fabricated. The cw threshold current was 27 mA at 20 /sup 0/C. The laser operated in a pure single longitudinal mode at the wavelength of 867 nm.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, 1-1, Tsukaguchi-Honmachi 8-chome, Amagasaki, Hyogo 661, Japan
• OSTI ID: 6535865
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:23; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT