Low threshold current AlGaAs/GaAs distributed feedback laser grown by two-step molecular beam epitaxy

Journal Article · Sun Sep 15 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96074· OSTI ID:5368673

Kojima, K; Noda, S; Mitsunaga, K; Kyuma, K; Nakayama, T

AlGaAs/GaAs distributed feedback lasers with oxide-stripe structure were fabricated by two-step molecular beam epitaxy (MBE) growth for the first time. The large coupling coefficient of 90 cm/sup -1/ was obtained by controlling precisely the thickness of each layer. As a result, the threshold current of 165 mA, which is the lowest ever reported, was obtained at room temperature. The characteristic temperature T/sub 0/ was as high as 210 K. Single longitudinal mode oscillation over the temperature range of 50 K was observed without mode hopping. Due to the uniformity of the thickness and composition of the layers grown by MBE, uniform oscillation wavelengths were observed.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661, Japan
• OSTI ID: 5368673
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
CURRENTS
DIMENSIONS
ELECTRIC CURRENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LAYERS
LOW TEMPERATURE
MOLECULAR BEAM EPITAXY
OSCILLATION MODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THICKNESS
THRESHOLD CURRENT