Application of metalorganic chemical vapor deposition to lasers for integrated optoelectronics

Conference · Thu Jan 01 04:00:00 EST 1981 · Proc. Soc. Photo-Opt. Instrum. Eng.; (United States)

OSTI ID:6534953

Dapkus, P D

Advances in metalorganic chemical vapor deposition (MOCVD) are briefly reviewed with emphasis on monolithic optoelectronic circuit applications. Consideration is given to quantum-well lasers based on material grown by MOCVD, complex multilayer overgrowths, and fabrication of TJS lasers on semiinsulated substrates. The recent developments also include demonstration of low threshold GaInAsP/InP lasers for operation at wavelengths longer than 1 micron grown by MOCVD and BH heterostructure lasers in which the overgrowth of the mesa was done by MOCVD. It is pointed out that MOCVD is ideal as an epitaxial technology for integrated optoelectronics.

• Research Organization: Rockwell International Electronics Research Center, Anaheim, CA
• OSTI ID: 6534953
• Report Number(s): CONF-810204-
• Conference Information: Journal Name: Proc. Soc. Photo-Opt. Instrum. Eng.; (United States) Journal Volume: 269
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
INTEGRATED CIRCUITS
JUNCTIONS
LASERS
MICROELECTRONIC CIRCUITS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PRODUCTION
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SUBSTRATES
SURFACE COATING
TECHNOLOGY UTILIZATION
VAPOR DEPOSITED COATINGS