1.3-{micro}m buried-heterostructure lasers using a CH{sub 4} reactive-ion-etched mesa structure grown by metalorganic vapor phase epitaxy

Book · Mon Dec 30 23:00:00 EST 1996

OSTI ID:536240

Kondo, Y; Kishi, K; Itoh, M; Oohashi, H; Itaya, Y; Yamamoto, M ^[1]

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1. NTT Opto-electronics Labs., Atsugi, Kanagawa (Japan)

This paper reports on the study of using dry etching and metalorganic vapor phase epitaxy (MOVPE) to fabricate of buried-heterostructure (BH) lasers. With a dry-etched mesa, there was anomalously large Zn diffusion into the mesa structure and it seriously degraded the lasing characteristics. Therefore, the authors inserted a buffer layer between the side wall of the dry-etched mesa and the p-InP current blocking layer. The buffer layer almost entirely eliminates Zn diffusion without changing the mesa geometry unlike the wet-etching treatment of the mesa structure. Fabricated lasers show high performance, high uniformity and good reliability.

• OSTI ID: 536240
• Report Number(s): CONF-960498--; ISBN 0-7803-3283-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ELECTRIC CURRENTS
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
RELIABILITY
SEMICONDUCTOR LASERS
STIMULATED EMISSION
VAPOR PHASE EPITAXY