MOCVD regrowth of InP on RIE patterned substrates for p-substrate 1.3{micro}m BH laser application
Book
·
OSTI ID:536243
- Mitsubishi Electric Corp., Itami, Hyogo (Japan). Optoelectronic and Microwave Devices Lab.
The authors have investigated the growth behavior of sulfur-doped n-InP layers around the dry-etched mesas as a function of various H{sub 2}S flow rates. It is found that the growth rate of n-InP layer of the sidewall ((1{bar 1}0) plane) of the mesa is significantly affected by the H{sub 2}S flow rate. Using this technique, the authors have fabricated p-substrate 1.3{micro}m BH laser with a pnp current-blocking structure around the dry-etched mesa and realized excellent lasing characteristics with high reliability for the first time.
- OSTI ID:
- 536243
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:536240
Successful utilization of CH{sub 4}/H{sub 2} RIE for the fabrication of 1.3 {micro}m InGaAsP/InP integrated laser with butt-coupled passive waveguides
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:536186
Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features
Journal Article
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Sat May 01 00:00:00 EDT 1993
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
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OSTI ID:146996