Modeling of hydrogenated amorphous silicon Schottky structures using capacitance-voltage and conductance-voltage measurements

Journal Article · Tue Feb 01 04:00:00 EST 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332056· OSTI ID:6534334

Lahri, R; Han, M K; Anderson, W A

The conduction process in a-Si:H Schottky structures (metal-I-N/sup +//substrate) is controlled primarily by the intrinsic (I) layer. This layer acts as a photoconductive insulator sandwiched between the bottom injecting contact and top blocking contact. A model incorporating this dual behavior of the I layer has been proposed to develop equations for the terminal dark current, capacitance (C), and conductance-voltage (G-V) characteristics of these structures. The results of dark C-V and G-V computations have been compared with the experimental data. The basic features of dark and illuminated G-V and illuminated C-V data have also been explained on the basis of this model.

• Research Organization: Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, New York 14226
• OSTI ID: 6534334
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
AMORPHOUS STATE
CAPACITORS
CHEMICAL REACTIONS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUATIONS
EQUIPMENT
HYDROGENATION
LAYERS
MATHEMATICAL MODELS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
SCHOTTKY EFFECT
SEMIMETALS
SILICON