Low pressure chemical vapor deposition of in situ boron-doped polysilicon
- Dept. of Electronics, Carleton Univ., Ottawa, Ontario K1S 5B6 (CA)
The deposition of in situ boron-doped polysilicon from a mixture of diborane and silane was studied over a temperature range of 450 - 600C, and a diborane/silane flow rate varying from 0.002 to 0.02. Diborane enhances the deposition rate and suppresses the activation energy of the deposition reaction. Diborane also reduces the temperature of the amorphous/polycrystalline transition. Resistivity after annealing (650 or 900C) decreases with increasing diborane flow and with decreasing deposition temperature. Minimum resistivity is obtained by depositing the silicon as an amorphous film and annealing at high temperature (greater than or equal to900C). Of particular importance to low thermal budget processes, however, is the low resistivity (3.0 m -cm) obtained by annealing an initially amorphous film at 650C.
- OSTI ID:
- 6523533
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 135:7; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101 -- Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
ACTIVATION ENERGY
AMORPHOUS STATE
ANNEALING
BORON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
DOPED MATERIALS
ELEMENTS
ENERGY
FILMS
HEAT TREATMENTS
HIGH TEMPERATURE
HYDRIDES
HYDROGEN COMPOUNDS
LOW PRESSURE
MATERIALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
POLYCRYSTALS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING
TECHNOLOGY ASSESSMENT
THIN FILMS