Temperature dependences of the thresholds of InGaAsP--InP double heterostructure lasers (lambda = 1. 55. mu. ) in the case of optical and current excitation of nonequilibrium carriers

Journal Article · Sat May 01 00:00:00 EDT 1982 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6522765

Garbuzov, D Z; Chalyi, V P; Mishurnyi, V A; Akhmedov, D; Agaev, V V; Evtikhiev, V P

Comparison was made of the temperature dependences of the lasing thresholds of InGaAsP--InP double heterostructures (lambda = 1.5 ..mu..) subjected to current and optical excitation of nonequilibrium carriers in the active region. The increase in the lasing threshold on increse in temperature was found to be much faster in the case of excitation with the current than in the case of optical pumping. The difference between the temperature dependences of the threshold characteristics of the investigated heterostructures was attributed to noncoincidence of the position of the p--n junction with the heterojunction.

• Research Organization: A. F. Ioffe Pysicotechnical Institute, Academy of Sciences of the USSR, Leningrad
• OSTI ID: 6522765
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 16:5; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AUGMENTATION
CURRENT DENSITY
ENERGY
LASERS
LAYERS
OPTICAL PUMPING
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY