Luminescence and threshold characteristics of optically excited InGaAsP/InP double heterostructures (0. 94

Journal Article · Sat Dec 31 23:00:00 EST 1983 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:7022212

Garbuzov, D Z; Chudinov, A V; Agaev, V V; Chalyi, V P; Evtikhiev, V P

The luminescence and threshold characteristics of InGaAsP/InP heterostructures with a wide range of compositions of the active region were investigated for the first time under optical excitation conditions. Weakening of the Auger recombination process on going over from structures emitting at lambda = 1.51 ..mu.. to ''wide-gap'' structures emitting at lambda = 1.1 ..mu.. increased the value of the parameter T/sub 02/ representing the temperature dependence of the lasing threshold at T>250 K: the parameter T/sub 02/ increased from 60 K to 90--95 K. For the same reason, a reduction in the wavelength lambda in the range 1.1

• Research Organization: A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad
• OSTI ID: 7022212
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 18:1; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CHEMICAL COMPOSITION
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
INHIBITION
JUNCTIONS
LIGHT SOURCES
LOW TEMPERATURE
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
RADIATION SOURCES
RADIATIONS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
STIMULATED EMISSION
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY