Single and double quantum well lasers with a monolithically integrated passive section

Journal Article · Mon Aug 20 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103428· OSTI ID:6516708

Werner, J; Lee, T P; Kapon, E; Colas, E; Stoffel, N G; Schwarz, S A; Schwartz, L C; Andreadakis, N C ^[1]

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1. Bellcore, 331 Newman Springs Road, Red Bank, NJ (USA)

Single (SQW) and double (DQW) quantum well composite cavity GaAs/AlGaAs lasers with an integrated passive section were fabricated and compared. Si implantation was used for partial quantum well disordering in the passive section. Implanted DQW lasers with a 2.6-mm-long cavity had threshold currents of 26.3 mA compared to 33 mA for implanted SQW lasers. The measured resonant absorption in the passive section showed an exponential roll-off in agreement with Urbach's law. The characteristic energy {ital E}{sub 0} associated with Urbach's law was 6 meV for untreated SQW and DQW lasers and {approx}11 meV for implanted SQW and DQW lasers.

• OSTI ID: 6516708
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:8; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COMPARATIVE EVALUATIONS
CURRENTS
ELECTRIC CURRENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
LASERS
MODULATION
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT