GaInAsP/InP integrated ridge laser with a butt-jointed transparent optical waveguide fabricated by single-step metalorganic vapor-phase epitaxy

Journal Article · Sat Sep 01 00:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.346505· OSTI ID:6515946

Remiens, D; Rose, B; Carre, M; Hornung, V ^[1]

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1. Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux, 196, Avenue Henri Ravera, 92220 Bagneux (France)

A monolithic integration between an active and an external passive waveguide in such a way they are directly butt-jointed in a single epitaxial step is demonstrated in the InP system. The growth behavior during nonplanar metalorganic vapor-phase epitaxy on a patterned InP substrate was investigated by using a periodic structure on GaInAs or InGaAsP/InP layers. A 1.5-mm-long ridge laser consisting of an active guide butt-jointed to a transparent waveguide has exhibited lasing oscillation at 1.5 {mu}m with a threshold current of 82 mA. A coupling coefficient of 60% has been experimentally measured.

• OSTI ID: 6515946
• Journal Information: Journal of Applied Physics; (USA), Vol. 68:5; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
VAPOR PHASE EPITAXY
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
FABRICATION
INTEGRATED CIRCUITS
OPERATION
OPTICAL FIBERS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
EPITAXY
FIBERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MICROELECTRONIC CIRCUITS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)