Ion enhanced reactive etching of tungsten single crystals and films with XeF/sub 2/
The etching of W(100) single crystals and sputter-deposited tungsten films by XeF/sub 2/ has been investigated with and without inert gas ion bombardment. The surface fluorine was measured by Auger electron spectroscopy as a function of pressure (from low 10/sup -8/ to 10/sup -4/ Torr), and temperature (80--1300 K). The fluorine coverage was found to be near one monolayer at 170 K and decreased to 4% coverage at 1300 K. The pressure dependence showed a maximum coverage for sputter-deposited films at 6 x 10/sup -6/ Torr. Quartz-crystal microbalance measurements of etch rates of sputter-deposited W films under different ion fluxes, XeF/sub 2/ pressures, ion beam angles, and temperatures have been measured and are consistent with a kinetic model of the etch process. The model, which is damage driven, reproduces well both the surface fluorine concentration and the measured etch rates with and without ion bombardment.
- Research Organization:
- Department of Physics, University of Houston, Houston, Texas 77004
- OSTI ID:
- 6512579
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 5:4; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low-temperature ion beam enhanced etching of tungsten films with xenon difluoride
Electron-induced damage of ThF/sub 4/ thin films in the presence of XeF/sub 2/
Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
AUGER ELECTRON SPECTROSCOPY
CHARGED PARTICLES
COLLISIONS
ELECTRON SPECTROSCOPY
ELEMENTS
ETCHING
FLUORIDES
FLUORINE
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENS
ION COLLISIONS
IONS
METALS
MOLECULAR IONS
NONMETALS
RARE GAS COMPOUNDS
SPECTROSCOPY
SPUTTERING
SURFACE FINISHING
TRANSITION ELEMENTS
TUNGSTEN
XENON COMPOUNDS
XENON FLUORIDES