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Electron-induced damage of ThF/sub 4/ thin films in the presence of XeF/sub 2/

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.572970· OSTI ID:5567190
During extensive bombardment with a 1-keV, 50-..mu..A electron beam, a ThF/sub 4/ thin film lost the equivalent of all of the fluorine in 27 monolayers as measured with a quartz crystal microbalance. The loss of surface fluorine was monitored with AES. This process is so efficient that initially almost every electron removes a fluorine atom. When the fluorine depleted surface was exposed to XeF/sub 2/ it rapidly gained back 1 equivalent monolayer of fluorine. Simultaneous exposure of a ThF/sub 4/ film to XeF/sub 2/ and 1-keV electrons showed a loss of 13 equivalent monolayers of fluorine. In the presence of XeF/sub 2/ and low-energy electrons ThF/sub 4/ can be made to rapidly absorb large quantities of fluorine. The influence of electron bombardment on fluorine desorption, sorption, and diffusion will be discussed.
Research Organization:
Physics Department, Washington State University, Pullman, Washington 99164-2814
OSTI ID:
5567190
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 3:3; ISSN JVTAD
Country of Publication:
United States
Language:
English