Effects of interface reactions on electrical characteristics of metal-GaAs contacts

Journal Article · Mon Jul 20 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98918· OSTI ID:6506697

Yu, K M; Walukiewicz, W; Jaklevic, J M; Haller, E E; Sands, T

Solid-state interface reactions between metal thin films and (100) GaAs substrates at elevated temperatures are studied by conventional and heavy-ion Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Metals investigated in this study include Pt, Pd, Ni, Co, Rh, and W. Electrical properties of the metal/n-GaAs diodes undergoing annealing treatments at various temperatures were also measured with the current-voltage dependence. Optimum diodes with maximum barrier heights as well as minimum leakage currents are obtained for diodes annealed at temperatures at which a uniform thin layer of reacted phase is observable at the interface. The barrier heights of the optimum diodes show a linear dependence on the work functions of the various metals. The range of these barrier heights is limited by nonstoichiometry related defects as suggested by a recently proposed amphoteric native defect model.

• Research Organization: Center for Advanced Materials and Department of Instrument Science, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6506697
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
COBALT
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
DATA
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INFORMATION
INTERFACES
LEAKAGE CURRENT
METALS
MICROSCOPY
NICKEL
NUMERICAL DATA
PALLADIUM
PHYSICAL PROPERTIES
PLATINUM
PLATINUM METALS
PNICTIDES
RHODIUM
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN
X-RAY DIFFRACTION