Pd/sub x/GaAs/GaAs: correlation between interface structure, morphology and electrical properties
Conference
·
OSTI ID:5283886
The structure, morphology, composition and electrical properties of ternary phase (Pd/sub x/GaAs) films on GaAs have been studied by transmission electron microscopy, energy dispersive x-ray spectrometry, Rutherford backscattering spectrometry and current-voltage measurements. Annealing 15 nm of Pd on (100) GaAs at 250/sup 0/C yields a planar monocrystalline film of the first ternary phase (approx.Pd/sub 3.9/Ga/sub 1.1/As/sub 0.9/) which is a rectifying contact to n-GaAs with a barrier height of approx.0.76 eV. A subsequent annealing treatment at 350/sup 0/C converts the film to a second ternary phase (approx.Pd/sub 3.3/Ga/sub 1.2/As/sub 0.8/) that exhibits a rough interface with GaAs, severely degraded electrical properties and a lower barrier height. The reduction in the measured barrier height is attributed to thermionic-field emission at sharp corners and protrusions in the Pd/sub x/GaAs/GaAs interface. The implications of these results for the utilization of Pd in multielemental contacts to GaAs are also discussed.
- Research Organization:
- Bell Communications Research, Inc., Murray Hill, NJ (USA); Lawrence Berkeley Lab., CA (USA). Center for Advanced Materials
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5283886
- Report Number(s):
- LBL-21049; CONF-8605111-4; ON: DE86015198
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERFACES
METALS
MICROSCOPY
MICROSTRUCTURE
PALLADIUM
PHASE STUDIES
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERFACES
METALS
MICROSCOPY
MICROSTRUCTURE
PALLADIUM
PHASE STUDIES
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY