Chemistry of grain boundary and bulk hydrogen in polysilicon
Results are summarized on kinetic modeling and Fourier transform infrared studies of the grain boundary passivation of polycrystalline silicon with monatomic hydrogen plasmas. By studying the electrical conductivity of polysilicon as a function of depth and time, considerable insight has been obtained concerning the overall pattern of hydrogen flow into the boundaries, and diffusion coefficients have been determined. In addition, FT-IR spectroscopy has yielded information about the detailed nature of the passivated sites and the exchange of hydrogen between sites during high temperature annealing. However, direct correlation between infrared band intensities and electrical conductivity have not been observed for treated polysilicon. In this paper we summarize our recent results in these two areas, discuss some limitations of these studies and pose important questions which need to be resolved.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6499953
- Report Number(s):
- SAND-85-1565C; CONF-851043-15; ON: DE86002167
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
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36 MATERIALS SCIENCE
360603 -- Materials-- Properties
CRYSTAL STRUCTURE
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
GRAIN BOUNDARIES
INFRARED SPECTRA
MICROSTRUCTURE
PASSIVATION
PHYSICAL PROPERTIES
POLYCRYSTALS
SEMIMETALS
SILICON
SPECTRA