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Polysilicon resistor modification with hydrogen plasmas on fabricated integrated circuits

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2100824· OSTI ID:5861890

Over the course of the last five to six years, it has been demonstrated that monatomic hydrogen plasmas can be quite effective in passivating the defect states in polycrystalline silicon grain boundaries. As the density of grain boundary defects is reduced, significant increases in majority conduction across the boundary are observed along with a large reduction in the number of minority carrier traps. In polysilicon solar cells, significant junction improvements are observed as well. These improvements in material and device properties are significant enough to warrant the incorporation of these processes in a number of commercial polysilicon solar cell process lines.

Research Organization:
Sandia National Labs., Organization 1144, Albuquerque, NM 87185
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5861890
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 134:8A; ISSN JESOA
Country of Publication:
United States
Language:
English