Light energy conversion system
First and second semiconductor photoelectric conversion structures, each having a PIN junction, are assembled as a unitary structure with a redox reaction chamber. Heavily doped N and P type semiconductor layers of the first and second semiconductor photoelectric conversion layers, respectively, are held in contact with first and second aqueous solutions contained in first and second cells of the redox reaction chamber. By interconnecting first and second electrodes connected to the P and N type semiconductor layers, respectively, of the first and second semiconductor photoelectric conversion structures, H/sub 2/ and O/sub 2/ gases are released from the first and second cells, respectively. Alternatively, electrical leads may be connected to the above N and P layers whereby the unitary structure may be employed as a source of electrical energy.
- Assignee:
- Semiconductor Energy Laboratory Co., Ltd. (Japan)
- Patent Number(s):
- US 4525436
- OSTI ID:
- 6499564
- Country of Publication:
- United States
- Language:
- English
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Light energy conversion system
Light energy conversion system
Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL REACTIONS
DEUTERIUM
DIRECT ENERGY CONVERTERS
ELECTRODES
ELEMENTS
FABRICATION
HETEROJUNCTIONS
HYDROGEN ISOTOPES
ISOTOPES
JUNCTIONS
LIGHT NUCLEI
MATERIALS
N-TYPE CONDUCTORS
NONMETALS
NUCLEI
ODD-ODD NUCLEI
OXYGEN
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
REDOX REACTIONS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
STABLE ISOTOPES