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U.S. Department of Energy
Office of Scientific and Technical Information

Light energy conversion system

Patent ·
OSTI ID:6499560

First and second semiconductor photoelectric conversion structures, each having a PIN junction, are assembled as a unitary structure with a redox reaction chamber. Heavily doped N and P type semiconductor layers of the first and seond semiconductor photoelectric conversion layers, respectively, are held in contact with first and second electrolytic solutions contained in first and second cells of the redox reaction chamber. By interconnecting third and fourth electrodes connected to the P and N type semiconductor layers of the first and second semiconductor photoelectric conversion structures, respectively, the electrolytic solutions in the first and second cells are transformed into electrolytic solutions having chemical energy converted from electrical energy derived from the conversion light energy by semiconductor photoelectric conversion structures. furthermore, electric power may be outputted across first and second electrodes held in contact with the first and second electrolytic solutions, respectively.

Assignee:
Semiconductor Energy Laboratory Co., Ltd. (Japan)
Patent Number(s):
US 4525435
OSTI ID:
6499560
Country of Publication:
United States
Language:
English