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Light energy conversion system

Patent ·
OSTI ID:6406625

A semiconductor photoelectric conversion structure having a PIN junction is assembled as a unitary structure with a redox chamber, with the P (or N) type semiconductor layer of the former being heavily doped and held in contact with an aqueous solution contained in a cell compartment of the redox reaction chamber. By interconnecting a second electrode connected to the N (or P) type semiconductor layer of the semiconductor photoelectric conversion structure and a first electrode held in contact with an aqueous solution contained in another cell compartment of the redox reaction chamber, H/sub 2/ (or O/sub 2/) and O/sub 2/ (or H/sub 2/) gases are released from the first and second cells, respectively. Alternatively, electric power may be generated by connecting a first lead to the P (or N) type layer and a second lead to the second electrode.

Assignee:
Semiconductor Energy Laboratory Co., Ltd. (Japan)
Patent Number(s):
US 4528252
OSTI ID:
6406625
Country of Publication:
United States
Language:
English