Cluster emission during sputtering of liquid gallium-aluminum eutectic alloy
- Materials Science, Chemical Technology, and Chemistry Divisions, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
Abundance distributions of ionic and neutral clusters sputtered by 4 keV argon ion impacts on a liquid gallium-aluminum eutectic alloy have been measured by time-of-flight mass spectrometry. To photoionize the neutral species, a 193 nm (6.4 eV) ArF laser has been used. Neutral and ionic clusters as large as Ga{sub 14} and mixed clusters of the form Ga{sub {ital n}}Al with {ital n}{le}13 were detected. The abundance of the monoaluminum mixed clusters is found to increase with nuclearity and is discussed as the consequence of an increasing clusters depth of origin as the nuclearity increases. A comparison of the results with those obtained from the gallium-indium eutectic alloy reveals a similar cluster nuclearity dependence of the depth of origin. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 64907
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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