Abundance and depth of origin of neutral and ionic clusters sputtered from a liquid gallium-indium eutectic alloy

Journal Article · Mon Sep 19 00:00:00 EDT 1994 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.73.1719· OSTI ID:7167445

Lill, T B; Callaway, W F; Pellin, M J; Gruen, D M ^[1]

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1. Materials Science, Chemical Technology, and Chemistry Divisions, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Neutral and positively charged clusters produced by 4 keV Ar[sup +] ion bombardment of a liquid gallium-indium eutectic alloy have been studied by time-of-flight mass spectrometry coupled with single photon positionization of the neutrals. The abundence distributions for clusters with equal nuclearity are statistical. They confirm a strong indium surface segregation. An increasing gallium content and therefore larger depth of origin, was found for increasing cluster size.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 7167445
• Journal Information: Physical Review Letters; (United States), Vol. 73:12; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
GALLIUM ALLOYS
SPUTTERING
INDIUM ALLOYS
ARGON IONS
ATOMIC CLUSTERS
BINARY ALLOY SYSTEMS
CHARGE STATES
ION BEAMS
KEV RANGE 01-10
LIQUIDS
MASS SPECTRA
TIME-OF-FLIGHT METHOD
ALLOY SYSTEMS
ALLOYS
BEAMS
CHARGED PARTICLES
ENERGY RANGE
FLUIDS
IONS
KEV RANGE
SPECTRA
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