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Particle- and photoinduced conductivity in type-IIa diamonds

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.354957· OSTI ID:6488223
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  1. Laser Division, L-476, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
  2. Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)
  3. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)
  4. KEK Laboratory, Tsukuba-shi, Ibaraki-ken, 305 (Japan)
  5. Physics Division, SSC Laboratory, Dallas, Texas 75237 (United States)
  6. Department of Physics, University of Rochester, Rochester, New York 14627 (United States)
  7. Department of Physics, Harvard University, Boston, Massachusetts 02138 (United States)
  8. Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

Electrical characteristics associated with radiation detection were measured on single-crystal natural type-IIa diamond using two techniques: charged particle-induced conductivity and time-resolved transient photoinduced conductivity. The two techniques complement each other: The charged particle-induced conductivity technique measures the product of the carrier mobility [mu] and lifetime [tau] throughout the bulk of the material while the transient photoconductivity technique measures the carrier mobility and lifetime independently at the first few micrometers of the material surface. For each technique, the [mu][tau] product was determined by integration of the respective signals. The collection distance that a free carrier drifts in an electric field was extracted by each technique. As a result, a direct comparison of bulk and surface electrical properties was performed. The data from these two techniques are in agreement, indicating no difference in the electrical properties between the bulk and the surface of the material. The collection distance continues to increase with field up to 25 kV/cm without saturation. Using the transient photoconductivity technique the carrier mobility was measured separately and compared with a simple electron-phonon scattering model. The general characteristics of carrier mobility, lifetime, and collection distance at low electric field appear to be adequately described by the model.

OSTI ID:
6488223
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 74:2; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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