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Thickness dependence of the electrical characteristics of chemical vapor deposited diamond films

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.111501· OSTI ID:5437751
; ; ; ;  [1]; ; ;  [2]; ;  [3]; ;  [4]
  1. Crystallume, Menlo Park, California 94025 (United States)
  2. Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)
  3. Laser Division, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
  4. Department of Physics, Rutgers University, Piscataway, New Jersey 08854 (United States)

The electrical characteristics of chemically vapor deposited (CVD) diamond films were measured as a function of film thickness. The samples studied were polycrystalline with the average grain size increasing from approximately 1 [mu]m on the substrate side to approximately 30 [mu]m on the growth surface for the thickest sample. Using time-resolved transient photoconductivity and charged-particle induced conductivity, the collection distance ([ital d]) that a free carrier drifts under the influence of an applied electric field was measured. Our data indicate that there is a gradient in the collection distance through the material. This gradient in electrical properties has implications for electronic uses of CVD diamond.

DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5437751
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:2; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English