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Title: Application of reflection mass spectrometry to molecular-beam epitaxial growth of InAlAs and InGaAs

Journal Article · · J. Vac. Sci. Technol., B; (United States)
DOI:https://doi.org/10.1116/1.584733· OSTI ID:6482931

Reflection mass spectrometry (REMS) has been used to monitor In fluxes leaving the surface, and to optimize growth conditions during molecular-beam epitaxial (MBE) growth of InAlAs and InGaAs on InP. The optical, electrical, and structural properties of the films are shown to be a function of the measured indium signal. This optimization technique is independent of thermocouple or pyrometer readings to set the growth temperature, and has led to significant improvements in the optical and electrical properties of lattice matched InAlAs on InP. REMS-optimized unintentionally doped InAlAs has been grown with electron concentrations as low as 3 x 10/sup 15//cm/sup 3/, electron mobilities as high as 4 000 cm/sup 2//V s at 77 K, and photoluminescence linewidths as narrow as 10 meV. The high quality of these layers is attributed to reduced alloy clustering and reduced ionized impurity scattering.

Research Organization:
Sandia National Laboratories, Albuquerque, New Mexico 87185-5800
OSTI ID:
6482931
Journal Information:
J. Vac. Sci. Technol., B; (United States), Vol. 7:2
Country of Publication:
United States
Language:
English