Application of reflection mass spectrometry to molecular-beam epitaxial growth of InAlAs and InGaAs
Reflection mass spectrometry (REMS) has been used to monitor In fluxes leaving the surface, and to optimize growth conditions during molecular-beam epitaxial (MBE) growth of InAlAs and InGaAs on InP. The optical, electrical, and structural properties of the films are shown to be a function of the measured indium signal. This optimization technique is independent of thermocouple or pyrometer readings to set the growth temperature, and has led to significant improvements in the optical and electrical properties of lattice matched InAlAs on InP. REMS-optimized unintentionally doped InAlAs has been grown with electron concentrations as low as 3 x 10/sup 15//cm/sup 3/, electron mobilities as high as 4 000 cm/sup 2//V s at 77 K, and photoluminescence linewidths as narrow as 10 meV. The high quality of these layers is attributed to reduced alloy clustering and reduced ionized impurity scattering.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800
- OSTI ID:
- 6482931
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 7:2; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGMENTATION
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELEMENTS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LINE WIDTHS
LOW TEMPERATURE
LUMINESCENCE
MASS SPECTROSCOPY
METALS
MOBILITY
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
OPTIMIZATION
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SORPTIVE PROPERTIES
SPECTROSCOPY
SURFACE PROPERTIES
THIN FILMS
USES