Low defect and high uniformity solid-source molecular beam epitaxy of InAlAs/InGaAs/InP heterostructures for optical MQW-SPSL devices
- Bosch Telecom GmbH, Backnang (Germany)
Low defect density and high uniformity are essentials for MBE to produce low cost long wavelength optical devices. In general, molecular beam epitaxy on InP substrates gives relatively high defect densities. A drastic reduction to a level of 20/cm{sup 2}, which is nearly state of the art for GaAs technology, has been routinely achieved by use of an arsenic valved cracker cell for InGaAs/InAlAs layers with thickness uniformities in the range of {+-}0.2% or better over 40mm of 2-inch InP wafers. Quaternary InAlGaAs alloys, that are essential for wide operation temperature ranges of lasers, can be tailored by short period superlattices (SPSL) to grow graded index separate confinement heterostructures (GRINSCH) with highly precise composition control. However, device performance is limited due to moderate electrical and thermal conductivity. Using InP instead of InAlAs for the waveguide cladding layers combines the advantages of both material systems. Experiments on InP, InP/InGaAs- and InP/InAlAs-heterostructures with valved arsenic and valved phosphorus cracker cells indicate that similar material quality can be obtained.
- OSTI ID:
- 536178
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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