Near-surface defects formed during rapid thermal annealing of preamorphized and BF/sup +//sub 2/-implanted silicon
Near-surface defects formed during rapid thermal annealing (950--1150 /sup 0/C, 10 s) of preamorphized and BF/sup +//sub 2/-implanted (100) Si have been studied by a combination of cross-sectional transmission electron microscopy and secondary-ion mass spectrometry. Two types of defects are identified: fine clusters (1.5--4 nm in diameter) are shown to be related to fluorine, and stacking faults are correlated with the presence of both excess boron above the solid solubility limit and fluorine. In addition, the peak fluorine concentration is found to be lower in samples which contain a high density (approx.10/sup 8/ cm/sup -2/) of ''hairpin'' dislocations, indicating that a pipe diffusion mechanism for the rapid out-diffusion of fluorine may be operative.
- Research Organization:
- Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6482145
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 45:9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
FLUORINE
DIFFUSION
SILICON
ANNEALING
ATOM TRANSPORT
ION IMPLANTATION
SOLID CLUSTERS
STACKING FAULTS
AMORPHOUS STATE
BORON FLUORIDES
BORON IONS
CRYSTAL DEFECTS
DISLOCATIONS
MASS SPECTROSCOPY
MOLECULAR IONS
SOLUBILITY
SOLVENT PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
BORON COMPOUNDS
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENS
HEAT TREATMENTS
IONS
LINE DEFECTS
MICROSCOPY
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
RADIATION TRANSPORT
SEMIMETALS
SPECTROSCOPY
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies